Passage time statistics in semiconductor laser turn on
- 1 September 1988
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review A
- Vol. 38 (6) , 3136-3138
- https://doi.org/10.1103/physreva.38.3136
Abstract
The statistical properties of the time delay between the switch on and the attainment of a fixed value of the output power in single-mode semiconductor lasers are analyzed and discussed. In particular, we show that the only parameter needed to describe the process, when the laser is initially operated quite below threshold, is the value of the stationary output power of the final state, a result supported by recent experimental measurements.Keywords
This publication has 15 references indexed in Scilit:
- Stochastic-dynamics characterization of delayed laser threshold instability with swept control parameterPhysical Review A, 1988
- Theory for the Transient Statistics of a Dye LaserPhysical Review Letters, 1986
- Theory of chemical fluctuations in thermal explosionsPhysical Review A, 1985
- Theory of the phase noise and power spectrum of a single mode injection laserIEEE Journal of Quantum Electronics, 1983
- Phase noise in semiconductor lasers: A theoretical approachIEEE Journal of Quantum Electronics, 1983
- Passage-time statistics for the decay of unstable equilibrium statesPhysical Review A, 1981
- Transient Fluctuations in the Decay of an Unstable StatePhysical Review Letters, 1980
- Statistical Properties of Laser Radiation During a Transient BuildupPhysical Review A, 1971
- Time-Dependent Photoelectric Counting Statistics for a-Switched Laser Near ThresholdPhysical Review Letters, 1970
- Time-Dependent Statistical Properties of the Laser RadiationPhysical Review Letters, 1967