Optical Anisotropy of Vacancy-Ordered Ga2Se3 Grown by Molecular Beam Epitaxy
- 1 February 1992
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 31 (2B) , L143
- https://doi.org/10.1143/jjap.31.l143
Abstract
Optical anisotropy of the vacancy-ordered Ga2Se3 grown on (100)GaP has been investigated. The electron-diffraction studies revealed that the vacancy-ordered superstructure was predominantly formed in the [011] direction when the film was grown with a VI/III ratio of 150. From the transmission spectra for light polarized toward [011] and [01], it is found that a difference in the absorption coefficients of the two polarized lights is more than 104 cm-1 at a wavelength of around 525 nm, and that the vacancy-ordered Ga2Se3 behaves like a polarizer in the selected wavelength range.Keywords
This publication has 4 references indexed in Scilit:
- Vacancy ordering of Ga2Se3 films by molecular beam epitaxyApplied Physics Letters, 1991
- Polarized band-edge photoluminescence and ordering inPPhysical Review Letters, 1989
- A simple method for the determination of structure-factor phase relationships and crystal polarity using electron diffractionJournal of Applied Crystallography, 1982
- The Luminescence Characteristics of Some Group III-VI CompoundsProceedings of the Physical Society, 1963