Breakdown Fields along Various Crystal Orientations in 4H-, 6H- and 3C-SiC

• 1 April 2002
• journal article
• Published by Trans Tech Publications, Ltd. in Materials Science Forum
• Vol. 389-393, 651-654
• https://doi.org/10.4028/www.scientific.net/msf.389-393.651

Abstract

Keywords

• (03-38) PLANE
• (11-20) PLANE
• ANISOTROPY
• BREAKDOWN FIELD