Electroluminescences of Zn-diffused GaP Diodes and Their Electrical Characteristics

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Abstract
Electroluminescences and electrical characteristics were investigated concerning three kinds of Zn-diffused GaP diodes prepared from undoped, oxygen-free and oxygen-doped n-type crystals. Experiments have shown that the so-called red luminescence is closely related to the impurity oxygen, which is introduced into the crystals from quartz container during fabrication. At low temperatures below 100°K, all the diodes exhibited a breakdown phenomenon associated with negative resistance, and at the same time, a new orange luminescence. Both these phenomena are considered to be correlated closely with the impurity band conduction. The orange luminescence may be due to the transition between the impurity bands (the donor band and the acceptor band), and the breakdown may be caused by the impact ionization of electrons and holes of the impurity bands into the conduction band and the valence band.