Annealing of RuO 2 and Ru Bottom Electrodes and Its Effects on the Electrical Properties of (Ba,Sr)TiO 3 Thin Films
- 1 January 1998
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 37 (1R) , 284-289
- https://doi.org/10.1143/jjap.37.284
Abstract
Crystalline structures and surface morphologies of annealed RuO2 and Ru thin films were investigated using X-ray diffraction (XRD) and scanning electron microscopy (SEM). The annealing was performed in oxygen and argon ambient and high vacuum in the temperature range of 400–800° C. In oxygen ambient annealing, the surface morphology was drastically changed due to the evaporation of ruthenium dioxides in the form of RuO3 and RuO4. Annealed RuO2 thin film in vacuum was reduced to the Ru metal phase. The actual variation of RuO2 bottom electrodes during the deposition of (Ba,Sr)TiO3 (BST) thin films and the effects of the thermal stability of bottom electrodes on electrical properties of BST thin films deposited on RuO2/SiO2/Si were also investigated.Keywords
This publication has 6 references indexed in Scilit:
- (Ba, Sr)TiO3 Films Prepared by Liquid Source Chemical Vapor Deposition on Ru ElectrodesJapanese Journal of Applied Physics, 1996
- Effects of interfacial roughness on the leakage properties of SrTiO 3 thin film capacitorsIntegrated Ferroelectrics, 1995
- Phase evolution and annealing effects on the electrical properties of Pb(Zr0.53Ti0.47)O3 thin films with RuO2 electrodesThin Solid Films, 1995
- Electrical Properties and Crystal Structure of (Ba0.5Sr0.5)TiO3 Thin Films Prepared on Pt/SiO2/Si by RF Magnetron SputteringJapanese Journal of Applied Physics, 1995
- Note on the origin of intrinsic stresses in films deposited via evaporation and sputteringThin Solid Films, 1989
- Chemistry and thermodynamics of ruthenium and some of its inorganic compounds and aqueous speciesChemical Reviews, 1985