RHEED Intensity Observation during TEGa-As4 Alternate Supply Growth of GaAs

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Abstract
The RHEED intensity variation during the growth of GaAs with an alternating supply of TEGa and As4 is investigated. The measurements of the RHEED intensity recovery after supplying As4 molecules on the Ga-deposited surface and the growth rate of GaAs in the alternating TEGa and As4 supply mode demonstrate that the Ga deposition time T0, at which the RHEED intensity rises to a maximum, corresponds exactly to the Ga monolayer formation time. Using T0 as a measure of the Ga monolayer formation time, the decomposition rate of TEGa molecules is investigated as a function of the substrate temperature. The TEGa decomposition reaction takes place in the substrate temperature range of 350–450°C. The growth rate measurement shows that the decomposition rates are same on the As- and Ga-terminated surface.