Observation of Franz-Keldysh Oscillations in InP Self-Assembled Quantum Dot Systems
- 1 January 1999
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 38 (1S)
- https://doi.org/10.1143/jjap.38.563
Abstract
Distinct Franz-Keldysh oscillations were observed in the nonlinear reflection spectra of heterostructures with InP self-assembled quantum dots measured by the pump-probe method. These oscillations showed the presence of a built-in electric field of about 30 kV/cm. The built-in electric field is considered to originate from the electric charge captured by the structural defects on the dot interface. The estimated areal density of the electric charge is about 2×1011 cm-2. Electroreflectance showed nonmonotonic changes with the change in applied bias.Keywords
This publication has 8 references indexed in Scilit:
- Electronic structure of strainedquantum dotsPhysical Review B, 1997
- State-filling and magneto-photoluminescence of excited states in InGaAs/GaAs self-assembled quantum dotsSuperlattices and Microstructures, 1997
- Electronic structure and energy relaxation in strained InAs/GaAs quantum pyramidsSuperlattices and Microstructures, 1996
- Deep level transient spectroscopy of InP quantum dotsApplied Physics Letters, 1995
- Franz–Keldysh oscillations in modulation spectroscopyJournal of Applied Physics, 1995
- Nanoscale InP islands embedded in InGaPApplied Physics Letters, 1995
- Study of the two-dimensional–three-dimensional growth mode transition in metalorganic vapor phase epitaxy of GaInP/InP quantum-sized structuresApplied Physics Letters, 1994
- Schottky-Barrier Electroreflectance: Application to GaAsPhysical Review B, 1973