A 1.4 million element, full frame CCD image sensor with vertical overflow drain for anti-blooming and low color crosstalk

1 January 1987

proceedings article
Published by Institute of Electrical and Electronics Engineers (IEEE)

https://doi.org/10.1109/iedm.1987.191365

Abstract

Blooming and color crosstalk must be greatly suppressed in solid-state image sensors for nearly all imaging applications. A vertical overflow drain has been developed for a 1.4 megapixel image sensor for blooming suppression and low color crosstalk. The overflow drain is formed using a uniform flat p-well. This paper describes the modeling, fabrication, and experimental data associated with implementing vertical overflow in this device.

Keywords

CHARGE-COUPLED IMAGE SENSORS
CROSSTALK
IMAGE SENSORS
SEMICONDUCTOR PROCESS MODELING
CHARGE COUPLED DEVICES
SOLID STATE CIRCUITS
CLOCKS
SILICON
IMAGE STORAGE
FILLING

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