Germanium p- and n-MOSFETs fabricated with novel surface passivation (plasma-PH/sub 3/ and thin AlN) and TaN/HfO/sub 2/ gate stack
- 19 April 2005
- proceedings article
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
No abstract availableThis publication has 2 references indexed in Scilit:
- Effect of surface NH3 anneal on the physical and electrical properties of HfO2 films on Ge substrateApplied Physics Letters, 2004
- Ge MOS characteristics with CVD HfO/sub 2/ gate dielectrics and TaN gate electrodePublished by Institute of Electrical and Electronics Engineers (IEEE) ,2004