InGaAs/InP quantum well wires fabricated by GSMBE, MOCVD, and selective chemical etching techniques
- 1 October 1990
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 105 (1-4) , 254-259
- https://doi.org/10.1016/0022-0248(90)90372-r
Abstract
No abstract availableKeywords
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