Very low voltage, normally-off asymmetric Fabry–Perot reflection modulator
- 13 September 1990
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 26 (19) , 1588-1590
- https://doi.org/10.1049/el:19901018
Abstract
Using the electro-absorptive properties of ≈ 150 Å quantum wells in an asymmetric Fabry–Perot modulator (AFPM), a normally-off reflection modulator with very low drive voltage was demonstrated. With this device contrasts of more than 6 dB at normal incidence in reflection have been achieved, with a voltage swing of only 3.5 V and ≤3 dB insertion loss.Keywords
This publication has 1 reference indexed in Scilit:
- Multiple Quantum-Well Asymmetric Fabry-Perot Etalons for High-Contrast, Low-Insertion-Loss Optical ModulationPublished by Optica Publishing Group ,1989