THEN FILM CELLS BASED ON CuInSe2
- 1 August 1988
- journal article
- research article
- Published by Taylor & Francis in Phosphorus and Sulfur and the Related Elements
- Vol. 38 (3-4) , 409-417
- https://doi.org/10.1080/03086648808079735
Abstract
Using thin film devices of the form CdS(n)/CuInSe2(p) fabricated on electrodeposited CuInSe2, electrical and optical measurements have been made. From temperature-dependent I-V measurements, it was observed that the recombination current became progressively more important as the temperature was decreased. Results of dark C-V measurements indicated that CuInSe2 films with carrier concentrations in the range from 1015 to 1017 cm−3 can be easily prepared using the electrodeposition method. Photoresponse of the devices was also measured, giving an essentially flat region in the range from 0.6 to 1.0 micron. At wavelengths beyond 1 micron, the quantum efficiency decreased continuously with the increase in the wavelength. This continuous decrease in the quantum efficiency could be due to the presence of interface states as suggested by the photo capacitance measurements.Keywords
This publication has 3 references indexed in Scilit:
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- Schottky-barrier height determination in the presence of interfacial disorderSemiconductor Science and Technology, 1986
- The effect of deep states on the photovoltaic performance of CdZnS/CuInSe2 thin film devicesSolar Cells, 1986