Ultra-thin-channelled GaAs MESFET with double-δ-doped layers
- 4 August 1988
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 24 (16) , 1034-1035
- https://doi.org/10.1049/el:19880704
Abstract
GaAs MESFETs with double-δ-doped layers have been fabricated with electron-beam-induced resist. The FET is made with the δ-doped channel embedded as shallow as 70 ̇ from the surface, and shows an intrinsic transconductance of 400 mS/mm for a gate length of about 1500 ̇.Keywords
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