Some properties of thin-film SOI MOSFETs
- 1 November 1987
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Circuits and Devices Magazine
- Vol. 3 (6) , 16-20
- https://doi.org/10.1109/MCD.1987.6323175
Abstract
The properties that can be expected from thin-film silicon-on-insulator transistors are described. Simple qualitative modeling shows that improvements of different parameters, such as subthreshold slope, hot-electron effects, and short-channel effects, can be obtained when thin, fully depleted films are used. The potential advantages of using these devices for future small-geometry CMOS applications are highlighted.Keywords
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