Control of diamond heteroepitaxy on nickel by optical reflectance
- 2 June 1997
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 70 (22) , 2960-2962
- https://doi.org/10.1063/1.118756
Abstract
Real time in situ laser reflectometry was used to investigate changes in surface morphology observed during the nucleation of oriented diamond on Ni in a hot filament chemical vapor deposition reactor. Characteristic features observed in the intensities of reflected and scattered light were interpreted by comparison with scanning electron micrographs of the diamond seeded substrates quenched at sequential stages of the process. Based on this analysis, a process was developed in which the scattered light signal was used as a steering parameter. Using this process, oriented nucleation and growth of diamond on Ni can be repeatedly achieved.Keywords
This publication has 4 references indexed in Scilit:
- Heteroepitaxial diamond growth on platinum(111) by the Shintani processDiamond and Related Materials, 1996
- Nucleation of oriented diamond films on nickel substratesJournal of Materials Research, 1993
- Local epitaxial growth of diamond on nickel from the vapour phasePhilosophical Transactions A, 1993
- Diamond SynthesisAdvances in Chemical Physics, 1965