High pressure study of GaAsAlxGa1−xAs quantum wells at low temperatures

This publication has 7 references indexed in Scilit:

• Pressure dependence of GaAs/AlxGa1−xAs quantum-well bound states: The determination of valence-band offsets
  Journal of Vacuum Science & Technology B, 1986
• High-pressure studies of GaAs-${\mathrm{Ga}}_{1\mathrm{-}\mathrm{x}}$${\mathrm{Al}}_{\mathrm{x}}$As quantum wells of widths 26 to 150 Å
  Physical Review B, 1986
• Photoluminescence studies of a GaAs-${\mathrm{Ga}}_{1\mathrm{-}\mathrm{x}}$${\mathrm{Al}}_{\mathrm{x}}$As superlattice at 8–300 K under hydrostatic pressure (0–70 kbar)
  Physical Review B, 1985
• Pressure dependence of shallow bound states in gallium arsenide
  Solid State Communications, 1985
• Low-temperature studies of the photoluminescence in CdS under hydrostatic pressure
  Physical Review B, 1985
• Pressure coefficient of the direct band gap ofAlxGa1−xAsfrom optical absorption measurements
  Physical Review B, 1979
• GaAs lower conduction-band minima: Ordering and properties
  Physical Review B, 1976