Extremely high selective, highly anisotropic, and high rate electron cyclotron resonance plasma etching for n+ poly-Si at the electron cyclotron resonance position
- 1 November 1990
- journal article
- Published by American Vacuum Society in Journal of Vacuum Science & Technology B
- Vol. 8 (6) , 1192-1198
- https://doi.org/10.1116/1.584939
Abstract
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