Strained-layer Ga1−xInxAs/InP avalanche photodetectors
- 3 October 1988
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 53 (14) , 1294-1296
- https://doi.org/10.1063/1.100001
Abstract
We have investigated the electrical and optical properties of avalanche photodiodes with the absorption region formed by Ga1−x InxAs/InP strained‐layer superlattices. High quality structures with the In concentration x as high as 1 have been grown by gas source molecular beam epitaxy. We have extended the photodiode response to approximately 2 μm and obtained avalanche gain of 16. The spectral range accessible with these strained‐layer devices is carefully modeled.Keywords
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