High temperature radiative properties of thin polysilicon films at the λ = 0.6328 μm wavelength
- 30 November 1993
- journal article
- Published by Elsevier in International Journal of Heat and Mass Transfer
- Vol. 36 (17) , 4163-4172
- https://doi.org/10.1016/0017-9310(93)90078-k
Abstract
No abstract availableKeywords
This publication has 13 references indexed in Scilit:
- The temperature dependence of the refractive index of silicon at elevated temperatures at several laser wavelengthsJournal of Applied Physics, 1986
- Optical characterization of polycrystalline silicon before and after thermal oxidationThin Solid Films, 1985
- Growth and Physical Properties of LPCVD Polycrystalline Silicon FilmsJournal of the Electrochemical Society, 1984
- Optical functions of silicon between 1.7 and 4.7 eV at elevated temperaturesPhysical Review B, 1983
- Optical absorption of silicon between 1.6 and 4.7 eV at elevated temperaturesApplied Physics Letters, 1982
- Ellipsometry Measurements of Polycrystalline Silicon FilmsJournal of the Electrochemical Society, 1982
- Optical properties of thin filmsThin Solid Films, 1982
- Temperature dependence of the reflectance of solid and liquid siliconJournal of Applied Physics, 1981
- Structure and Properties of LPCVD Silicon FilmsJournal of the Electrochemical Society, 1980
- Design and operation of an automated, high-temperature ellipsometerJournal of the Optical Society of America, 1974