Elements of the leakage current of high-? ferroelectric PZT films

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Abstract
Detailed analysis of the time evolution of the leakage current of thin-film PZT capacitors vs. bias voltage and temperature revealed the existence of three different current regimes. While both interface and bulk effects can control the second (saturated) current regime, it is shown that only bulk effects are responsible for both the first (transient) and third (oxygen vacancy drift controlled) regime.