Electron and hole mobilities in silicon as a function of concentration and temperature

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Abstract
An analytical expression has been derived for the electron and hole mobility in silicon based on both experimental data and modified Brooks-Herring theory of mobility. The resulting expression allows one to obtain electron and hole mobility as a function of concentration up to\sim 10^{20}cm-3in an extended and continuous temperature range (250-500 K) within ± 13 percent of the reported experimental values.