Simulation of ion-beam etched pattern profiles

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Abstract
Profiles of fine patterns formed by ion-beam etching were simulated with a three-dimensional model on the basis of redeposition effect. First, a revolution ellipsoid format was assumed to represent angular distribution of sputtered atoms to simplify the simulation. Secondly, an experimentally obtained distribution was used. Consequently, the pattern width difference between mask and substrate decreases as the angular distribution changes from undercosine to overcosine. The pattern width difference, which shows a maximum value at the bottom of etched substrate patterns, is almost independent of pattern gap width. Pattern sidewalls become steeper with increasing gap width or with decreasing etched depth. These simulated pattern profiles are in good agreement with the experimental results.

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