Room temperature vertical cavity GaAs/AlGaAs surface emitting injection laser
- 13 September 1990
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 26 (19) , 1600-1601
- https://doi.org/10.1049/el:19901025
Abstract
A vertical cavity GaAs/AlGaAs top surface emitting injection laser (SEIL) has been fabricated using a simple planar technology. The laser has a low series resistance (40 Ω) and works at room temperature in pulsed operation with a duty cycle up to 35% and a threshold current of 55 mA. We obtained monomode operation at 896 nm wavelength, with a linewidth less than 1.5 Å. Both single SEILs and two dimensional SEIL arrays has been fabricated.Keywords
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