GaInAs junction FET fully dry etched by metal organic reactive ion etching technique

19 November 1987

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 23 (24) , 1254-1255
https://doi.org/10.1049/el:19870871

Abstract

The metal organic reactive ion etching technique, which uses a mixture of methane, hydrogen and argon, has been applied for the first time to the fabrication of a device. This etching technique is used to define the gate of a GaInAs junction FET. Results shows that it permits good control of etching depth with low surface damage.

Keywords

MORIE
METHANE AR-H2 ETCHING GAS MIXTURE
GAINAS JUNCTION FET
SURFACE DAMAGE
JFET
CONTROL OF ETCHING DEPTH
METAL ORGANIC REACTIVE ION ETCHING