Correlation of photoelectric properties of a-Si:H image sensor with compositional distribution of Si3N4 blocking interface
- 1 December 1983
- journal article
- Published by Elsevier in Journal of Non-Crystalline Solids
- Vol. 59-60, 1227-1230
- https://doi.org/10.1016/0022-3093(83)90390-3
Abstract
No abstract availableKeywords
This publication has 3 references indexed in Scilit:
- Properties of Amorphous Films Prepared from SiH4–N2–H2 Gas MixtureJapanese Journal of Applied Physics, 1982
- Wide Optical-Gap, Photoconductive a-SixN1-x:HJapanese Journal of Applied Physics, 1981
- Enhanced photoconductivity in nitrogen-doped amorphous silicon prepared by d.c. sputteringPhilosophical Magazine Part B, 1978