A high-speed Si lateral photodetector fabricated over an etched interdigital mesa
- 1 December 1980
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 37 (11) , 1014-1016
- https://doi.org/10.1063/1.91723
Abstract
A new kind of high‐speed photodetector has been constructed utilizing the anisotropic etching technique. It is demonstrated that, functioning as an edge‐incident photodiode, the detector responds reliably to subnanosecond light pulses with 40% overall quantum efficiency. And, functioning as a phototransistor, it responds to cw radiation with a current gain. Compatibility with existing planar processing is another feature. Possible mechanisms involved are discussed.Keywords
This publication has 3 references indexed in Scilit:
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- Annealing characteristics of highly P+-ion-implanted silicon crystal—two-step annealJournal of Applied Physics, 1977
- Photodetectors for optical communication systemsProceedings of the IEEE, 1970