Spin Relaxation of Electrons in Strained-GaAs-Layer Photocathode of Polarized Electron Source
- 1 December 1995
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 34 (12R) , 6444
- https://doi.org/10.1143/jjap.34.6444
Abstract
The luminescence polarization method using a mode-locked Ti:sapphire laser and a streak camera is applied to the measurement of the spin relaxation time and the lifetime of electrons in the strained-GaAs-layer photocathode of a polarized electron source. The spin relaxation time and the electron lifetime are 105 ps and 45 ps at room temperature, respectively. Electron-hole scattering is thought to be the main mechanism of the spin relaxation of our strained-GaAs photocathode.Keywords
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