Influence of substrate temperature and InAs mole fraction on the incorporation of indium during molecular-beam epitaxial growth of InGaAs single quantum wells on GaAs
- 1 January 1989
- journal article
- Published by American Vacuum Society in Journal of Vacuum Science & Technology B
- Vol. 7 (1) , 111-115
- https://doi.org/10.1116/1.584432
Abstract
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