IR, ESR and resistivity measurements on amorphous silicon oxi-nitride films prepared by PECVD at low temperature
- 1 February 1987
- journal article
- Published by Elsevier in Journal of Non-Crystalline Solids
- Vol. 90 (1-3) , 287-290
- https://doi.org/10.1016/s0022-3093(87)80428-3
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
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- XPS, ESR and resistivity measurements on amorphous silicon oxynitride films (a-SiOxNy) prepared by reactive evaporation of Si in presence of NO2Journal of Non-Crystalline Solids, 1983
- Calculations of the g‐value and linewidth of the esr signal in amorpous silicon nitridePhysica Status Solidi (b), 1982
- Electron spin resonance and hopping conductivity of a-SiOxJournal of Non-Crystalline Solids, 1979