12.5 Gbit/s silicon bipolar 1:4-demultiplexer IC
- 5 November 1992
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 28 (23) , 2160-2162
- https://doi.org/10.1049/el:19921387
Abstract
A silicon bipolar 1:4-demultiplexer IC is presented which can be operated up to ∼12.5Gbit/s. The channels are aligned to the outputs by two external control signals. The 370 transistor chip was fabricated with an 0.4μm emitter double polysilicon 21 GHz fT Si bipolar process and consumes ∼1.9W.Keywords
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