Direct optical observation of hydrogenation induced damage in GaAs

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Abstract
Differential reflectance (DR) spectroscopy has been applied to the study of surface damage on GaAs caused by direct exposure to a hydrogen plasma. DR spectra reveal features at photon energies corresponding to the critical points of the GaAs band structure. The observed signal appearing below the GaAs band gap is attributed to defect states created by the hydrogen plasma. Comparison with the DR spectra of samples exposed to an argon plasma suggests that the defect states are caused by ion impact and are independent of the chemical nature of the impinging ions. The density of defect states shows a linear dependence on maximum ion energy.

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