The Nucleation and Generation of Dislocation Half-Loops in III–V Compounds
- 16 July 1979
- journal article
- Published by Wiley in Physica Status Solidi (a)
- Vol. 54 (1) , 407-412
- https://doi.org/10.1002/pssa.2210540151
Abstract
No abstract availableKeywords
This publication has 3 references indexed in Scilit:
- Use of misfit strain to remove dislocations from epitaxial thin filmsThin Solid Films, 1976
- Defects associated with the accommodation of misfit between crystalsJournal of Vacuum Science and Technology, 1975
- Accommodation of Misfit Across the Interface Between Crystals of Semiconducting Elements or CompoundsJournal of Applied Physics, 1970