High efficiency indium gallium arsenide photovoltaic devices for thermophotovoltaic power systems
- 2 May 1994
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 64 (18) , 2415-2417
- https://doi.org/10.1063/1.111585
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- Monolithic, series-connected InP/Ga/sub 0.47/In/sub 0.53/As tandem solar cellsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- Development of high-performance GaInAsP solar cells for tandem solar cell applicationsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- Simple, extremely low resistance contact system to n-InP that does not exhibit metal-semiconductor intermixing during sinteringApplied Physics Letters, 1993
- Ga0.47In0.53As photovoltaic booster cells for tandem solar energy conversionSolar Cells, 1989
- Optimum efficiency of single and multiple bandgap cells in thermophotovoltaic energy conversionSolar Cells, 1986