Evidence of annealing effects on a high-density Si/SiO2 interfacial layer
- 9 June 1997
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 70 (23) , 3119-3121
- https://doi.org/10.1063/1.119090
Abstract
Thermally grown Si(001)/ samples were studied by x-ray reflectivity. Fits of model electron density profiles to the data reveal the existence of an interfacial layer at the interface up to 15-Å-thick, with density higher than either the crystalline Si or the main oxide layer. This density of the layer is reduced by a postoxidation anneal.
Keywords
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