Amient-induced defect states at a-Si:H/ITO interfaces
- 1 December 1989
- journal article
- Published by Elsevier in Journal of Non-Crystalline Solids
- Vol. 115 (1-3) , 114-116
- https://doi.org/10.1016/0022-3093(89)90378-5
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- Transient photocurrents in a-Si:H diodes: Effects of deep trappingPhysica Status Solidi (a), 1988
- Schottky diodes with high series resistance: A simple method of determining the barrier heightsSolid-State Electronics, 1988
- The interfaces a-Si:H/Pd and a-Si:H/ITO: Structure and electronic propertiesJournal of Non-Crystalline Solids, 1987
- Physical aspects of a-Si:H image sensorsJournal of Non-Crystalline Solids, 1987
- Light-induced metastable defects in hydrogenated amorphous silicon: A systematic studyPhysical Review B, 1985