Novel linearisation technique for implementing large-signal MOS tunable transconductor
- 18 January 1990
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 26 (2) , 138-139
- https://doi.org/10.1049/el:19900094
Abstract
A novel linearisation technique for exploiting the inherent square-law characteristics to implement a large-signal tunable transconductor with high linearity in MOS technology is presented. Three transconductors implemented using this technique are discussed and compared. Simulation and experimental results are given.Keywords
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