X-ray standing-wave and tunneling-microscope location of gallium atoms on a silicon surface
- 15 January 1989
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 39 (2) , 1298-1301
- https://doi.org/10.1103/physrevb.39.1298
Abstract
The position of gallium atoms on a silicon (111) surface has been completely determined using the tunneling microscope and x-ray standing-wave methods. The (√3 × √3 )R30° electron diffraction pattern observed with (1/3-monolayer coverages is shown to result from a simple adatom gallium lattice with the adatoms at a distance 1.49 Å above the bulk extrapolated surface (111) plane above the filled threefold silicon surface sites. Total-energy calculations correctly predict the binding site with the Ga 1.33 Å above the bulk (111) plane.Keywords
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