Comparative study of tantalum and tantalum nitrides (Ta2N and TaN) as a diffusion barrier for Cu metallization
- 1 September 1996
- journal article
- Published by American Vacuum Society in Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
- Vol. 14 (5) , 3263-3269
- https://doi.org/10.1116/1.588818
Abstract
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