GaAs Schottky—Read diodes for x-band operation
- 1 June 1974
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 21 (6) , 317-323
- https://doi.org/10.1109/T-ED.1974.17923
Abstract
High-efficiency performance of GaAs Schottky-Read IMPATT diodes has been observed at X-band frequencies. The highest efficiency measured was 26.1 percent with 2.5-W continuous-wave (CW) output power at 8.8 GHz for a single-mesa diode while multiple-mesa diodes have delivered more than 7 W at X band. The diodes were fabricated from multiple-layer epitaxial material with gold-plated heat sinks. Details of materials preparation and diode fabrication are presented. Theoretical calculations of diode breakdown voltage and efficiencies have been made as a function of the structural properties of the diodes. Good agreement has been obtained between the experimental microwave oscillator performance and the theoretical calculations.Keywords
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