High power continuous operation of laser diodes at 1064 nm
- 10 October 1991
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 27 (21) , 1979-1981
- https://doi.org/10.1049/el:19911226
Abstract
High power operation of strained-layer quantum well laser diodes at 1064 nm wavelength is described, with up to 5.25 W of continuous wave power achieved from a single 100 μm broad area stripe at room temperature before the onset of catastrophic facet damage. These devices also possess low threshold current and high power conversion efficiency.Keywords
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