Ultra-thin Ta/sub 2/O/sub 5/SiO/sub 2/ gate insulator with TiN gate technology for 0.1/spl mu/m MOSFETs

Publisher Website

1 January 1997

conference paper
Published by Institute of Electrical and Electronics Engineers (IEEE)

p. 135-136
https://doi.org/10.1109/vlsit.1997.623735

Abstract

No abstract available

Keywords

This publication has 2 references indexed in Scilit:

Parametric Studies on the Laser-Diode-Pumped, Thermal-Lensing-Compensated, Mode-Locked, Q-Switched Nd:YAG Laser
Japanese Journal of Applied Physics, 1994
Ultrathin Tantalum Oxide Capacitor Dielectric Layers Fabricated Using Rapid Thermal Nitridation prior to Low Pressure Chemical Vapor Deposition
Journal of the Electrochemical Society, 1993