Transients in the Deposition of Silicon Epitaxial Films in a CVD Reactor

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Abstract
The transients associated with the deposition of silicon epitaxial films in a horizontal reactor have been investigated. An understanding of these transients is important for the fabrication and control of the submicron films that will be required to accommodate VLSI designs. In order to investigate these transients, several experiments were carried out in which the steady‐state deposition of epitaxial silicon was perturbed by abruptly varying the flow of silicon species entering the reactor. The response of the epitaxial system to these perturbations was determined by measuring the resulting dopant distribution in the silicon film. A physical model that emphasizes the role of the adsorbed layer on the silicon surface was used to explain and simulate the behavior of the epitaxial system. By comparing theoretical simulations and experimental results, the time constant of the silicon deposition process was estimated to be in the 20–30 sec range.

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