Local- and defect-mode infrared absorption of carbon ions implanted in silicon
- 1 February 1973
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 44 (2) , 583-586
- https://doi.org/10.1063/1.1662228
Abstract
Infrared‐absorption measurements on carbon‐implanted silicon are reported. A localized vibrational mode for substitutional carbon has been observed in annealed samples and in samples implanted at 500°C. The results suggest that between 40 and 60% of the implanted ions occupy substitutional sites. A broad absorption band which shifts to shorter wavelength on annealing has been observed and is attributed to the formation of SiC microcrystals. Absorption bands at 1097, 750, 640, and 625 cm−1 have been observed in pulled crystals. It is suggested that these bands arise due to the presence of carbon‐oxygen complexes formed during implantation.This publication has 8 references indexed in Scilit:
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