Gain-current relation for GaAs lasers with n-type and undoped active layers
- 1 February 1973
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Quantum Electronics
- Vol. 9 (2) , 290-294
- https://doi.org/10.1109/jqe.1973.1077478
Abstract
No abstract availableThis publication has 20 references indexed in Scilit:
- GaAs–AlxGa1−xAs Double Heterostructure Lasers—Effect of Doping on Lasing Characteristics of GaAsJournal of Applied Physics, 1972
- Mode Reflectivity and Waveguide Properties of Double-Heterostructure Injection LasersJournal of Applied Physics, 1971
- GaAs–AlxGa1−xAs Double Heterostructure Injection LasersJournal of Applied Physics, 1971
- Inter-Valence-Band Transitions in Uniaxially Stressed Ge and GaAsPhysical Review B, 1969
- Chapter 14 Stimulated Emission in SemiconductorPublished by Elsevier ,1966
- Absorption Data of Laser-Type GaAs at 300° and 77°KJournal of Applied Physics, 1964
- Thomas-Fermi Approach to Impure Semiconductor Band StructurePhysical Review B, 1963
- QUANTUM EFFICIENCY OF GaAs INJECTION LASERSApplied Physics Letters, 1963
- Optical Absorption of Gallium Arsenide between 0.6 and 2.75 eVPhysical Review B, 1962
- Band structure of indium antimonideJournal of Physics and Chemistry of Solids, 1957