Design considerations of hyperabrupt varactor diodes

1 February 1971

journal article
Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices

Vol. 18 (2) , 109-115
https://doi.org/10.1109/T-ED.1971.17158

Abstract

This paper describes the design calculations and fabrication techniques used to produce hyperabrupt varactor diodes. The computation consists of determining, the doping profile, the capacitance as a function of applied voltage, the breakdown voltage, and the series resistance; allowance is made for the nonlinear variation of mobility with doping density. Fabrication of the retrograded region was accomplished by diffusion from a doped-oxide source. Two groups of diodes were fabricated. The first group had a breakdown voltage VBof 95 V at 1 µA, a capacitance ratio of 12 over a voltage range of 1 to 40 V (C_{P1}/C_{P40}=12), and a quality factorQof 60 at an operating level of 3 V and 100 MHz. The corresponding values for the second group were VB=45 V (C_{P1}/C_{P40}=4) andQ=210. The capacitance tracking capability of these diodes was found to be within 2 percent. These measurements showed excellent correlation with calculated results.

Keywords

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