Trap Levels of Beryllium in Silicon
- 1 February 1982
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 21 (2R) , 402-403
- https://doi.org/10.1143/jjap.21.402
Abstract
No abstract availableThis publication has 8 references indexed in Scilit:
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- A Modulated DLTS Method for Large Signal Analysis (C2-DLTS)Japanese Journal of Applied Physics, 1981
- Fast transient capacitance measurements for implanted deep levels in siliconApplied Physics B Laser and Optics, 1975
- Determination of deep trap levels in silicon using ion-implantation and CV-measurementsApplied Physics A, 1974
- Properties of a single-level surface state induced by Be implantation into Si–SiO2 interfacesJournal of Applied Physics, 1973
- Study of Beryllium and Beryllium-Lithium Complexes in Single-Crystal SiliconPhysical Review B, 1972
- Beryllium as an Acceptor in SiliconJournal of the Electrochemical Society, 1970
- Beryllium as an acceptor in siliconSolid State Communications, 1968