Temperature dependence of latchup in CMOS circuits

1 February 1984

journal article
Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters

Vol. 5 (2) , 41-43
https://doi.org/10.1109/edl.1984.25825

Abstract

Measurements of the temperature dependence of holding current in bulk CMOS devices indicate that a substantial improvement in latchup resistance may be achieved by liquid-nitrogen temperature operation of CMOS technology.

Keywords

TEMPERATURE DEPENDENCE
CIRCUITS
CURRENT MEASUREMENT
SEMICONDUCTOR DEVICE MEASUREMENT
LOGIC GATES
TESTING
TEMPERATURE DISTRIBUTION
CMOS TECHNOLOGY
MOS DEVICES
STRESS

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