A chemical bonding model for the native oxides of the III–V compound semiconductors

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Abstract
This paper presents a chemical bonding model for the local atomic order in the native oxide phases associated with the III–V compound semiconductors. We review XPS studies of surface and bulk oxides formed on GaAs, pointing out that the core shifts measured in these studies serve to distinguish between various oxidation states of the As and Ga atoms, but do not uniquely specify the local atomic geometries. Local atomic order in binary oxide glasses is discussed in terms of a general model which ascribes any qualitative differences in the local bonding of the two cationic species to the differences in their relative electronegativities. This model is then applied to the native oxides of both III–V and II–VI semiconductors, wherein it serves as a framework for a discussion of their local atomic structure. Finally, it is suggested that IR absorption spectroscopy can be an important tool in complementing XPS studies and thereby providing a definitive assignment of local atomic structure in native oxides of compound semiconductors.

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