Positron lifetime study on ion-implanted amorphous SiO2 with a variable-energy pulsed positron beam
- 1 June 1994
- journal article
- Published by Elsevier in Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
- Vol. 91 (1-4) , 410-412
- https://doi.org/10.1016/0168-583x(94)96258-8
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- Ion implantation induced defects in SiO2: The applicability of the positron probeApplied Physics Letters, 1993
- Ion-beam-induced recrystallization in Si(100) studied with slow positron annihilation and Rutherford backscattering and channelingPhysical Review Letters, 1993
- Study of SiO2-Si and metal-oxide-semiconductor structures using positronsJournal of Applied Physics, 1993
- Interaction of positron beams with surfaces, thin films, and interfacesReviews of Modern Physics, 1988