Two-dimensional profiling by selective etching: the role of implant induced secondary defects
- 1 March 1995
- journal article
- Published by Elsevier in Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
- Vol. 96 (1-2) , 139-143
- https://doi.org/10.1016/0168-583x(94)00473-0
Abstract
No abstract availableKeywords
This publication has 2 references indexed in Scilit:
- Methods for the measurement of two-dimensional doping profilesJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1992
- On the Mechanism of Chemically Etching Germanium and SiliconJournal of the Electrochemical Society, 1960